Part Name
DDR SDRAM H5TQ4G63EFR-RDC  4Gb DDR3 SDRAM
Features• VDD=VDDQ=1.5V +/- 0.075V
• Fully differential clock inputs (CK, CK) operation
• Differential Data Strobe (DQS, DQS)
• On chip DLL align DQ, DQS and DQS transition with CK
transition
• DM masks write data-in at the both rising and falling
edges of the data strobe
• All addresses and control inputs except data,
data strobes and data masks latched on the
rising edges of the clock
• Programmable CAS latency 5, 6, 7, 8, 9, 10, 11, 13
and 14 supported
• Programmable additive latency 0, CL-1, and CL-2
supported
• Programmable CAS Write latency (CWL) = 5, 6, 7, 8, 9
and 10
• Programmable burst length 4/8 with both nibble
sequential and interleave mode
• BL switch on the fly
• 8banks
* This product in compliance with the RoHS directive.

1. What service do you have ?

We are supplier of diode, bridge rectifiers and automotive rectifier diode. and mosfet ,We could supply competitive price and fast delivery and good quality with prompt service,  We have our own R&D team , and Engineer to ensure to offer the best service to clients . 
 
2. May I have some samples for testing?

We offer free samples for our customers and they only need to pay the freight for samples.

3. What about the delivery ?

Usually the lead time is about 1-4  weeks after receiving payment. For normal parts , we have the quantity in stock. 

4. What about the payment terms ?

This can be discussed based on the actual order situation. 
 
5. What about the shipment terms ?

FOB shenzhen by sea; We also work with DHL, FEDEX, TNT and etc. For large quantity , it's up to clients to choose the freight forwarder, our we can offer the service to assist clients  

6. Do you hae any minimum order quantity requirement?

Based on the different products, for firt trial order to test, we can offer the quantity based on clients request,   for repeat order, MOQ is based on the minimum packaging quantity.